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Preliminary Technical Information
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH24N90P IXFT24N90P
VDSS ID25
RDS(on) trr
= =
900V 24A 420m 300ns
TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 900 900 30 40 24 48 12 1 15 660 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 4 V V V V A A A J V/ns W C C C C C Nm/lb.in. g g Features International standard packages Avalanche Rated Low package inductance Fast intrinsic diode Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125C Characteristic Values Min. Typ. Max. 900 3.5 6.5 200 V V nA Applications: Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls G = Gate S = Source D = Drain TAB = Drain
G S TAB TAB
TO-268 (IXFT)
25 A 2 mA 420 m
VGS = 10V, ID = 0.5 * ID25, Note 1
(c) 2008 IXYS CORPORATION, All rights reserved
DS100059(10/08)
IXFH24N90P IXFT24N90P
Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs RGi Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS (TO-247) 0.25 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 0.5 * ID25, Note 1 Gate input resistance Characteristic Values Min. Typ. Max. 10 16 1.1 7200 490 60 46 40 68 38 130 50 58 S pF pF pF ns ns ns ns nC nC nC 0.19 C/W C/W
Dim.
e P
TO-247 (IXFH) Outline
Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 12A, -di/dt = 100A/s VR = 100V, VGS = 0V
Characteristic Values Min. Typ. Max. 24 96 1.5 A A V
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
300 ns 1.1 11 C A
Note 1: Pulse test, t 300s; duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFH24N90P IXFT24N90P
Fig. 1. Output Characteristics @ 25C
24 22 20 40 18 35 8V VGS = 10V 9V 50 45 VGS = 10V 9V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
16
ID - Amperes
14 12 10 8 6 4 2 0 0 1 2 3 4 5 6
30 25 20 15 10 7V 6V 0 3 6 9 12 15 18 21 24 27 30 8V
7V
6V 7 8 9 10
5 0
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
24 22 20 VGS = 10V 9V 3.2 3.0 2.8 2.6
Fig. 4. RDS(on) Normalized to ID = 12A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
18
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 I D = 12A I D = 24A
ID - Amperes
16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14
8V
7V
6V 5V 16 18 20 22 24
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Drain Current
2.8 2.6 2.4 VGS = 10V TJ = 125C 26 24 22 20 18
Fig. 6. Maximum Drain Current vs. Case Temperature
RDS(on) - Normalized
2.2
ID - Amperes
TJ = 25C
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 4 8 12 16 20 24 28 32 36 40 44 48
16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2008 IXYS CORPORATION, All rights reserved
IXFH24N90P IXFT24N90P
Fig. 7. Input Admittance
30 30 TJ = - 40C 25 25 25C
Fig. 8. Transconductance
g f s - Siemens
20
ID - Amperes
TJ = 125C 25C - 40C
20
15
15
125C
10
10
5
5
0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
80 70 60 16 14 12 VDS = 450V I D = 12A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 125C TJ = 25C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
50 40 30 20 10 0
10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 1.00
Fig. 12. Maximum Transient Thermal Impedance
f = 1MHz Capacitance - PicoFarads
10,000 Ciss
1,000
Z(th)JC - C / W
Coss
0.10
100 Crss 10 0 5 10 15 20 25 30 35 40 0.01 0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_24N90P (85)10-23-08

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